AON6160 general description product summary v ds i d (at v gs =10v) 100a r ds(on) (at v gs =10v) < 1.58m? applications 100% uis tested 100% rg tested ? synchronous rectification in dc/dc and ac/dc c onverters ? industrial and motor drive applications absolute maximum ratings t a =25c unless otherwise noted AON6160 dfn 5x6 tape & reel 3000 60v n-channel alphasgt tm orderable part number package type form minimum order q uantity 60v ? trench power alphasgt tm technology ? low r ds(on) ? low gate charge ? optimized for fast-switching applications ? rohs and halogen-free compliant g ds top view 12 3 4 87 6 5 pin1 pin1 dfn5x6 top view bottom view symbol v ds v gs i dm i as avalanche energy l=0.3mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc power dissipation b 86 t c =100c 10s p d 60 72 215 gate-source voltage pulsed drain current c 100 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.43 50 0.58 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units w i d v a 53 a 400 i dsm 39 mj 421 49 100 7.3 power dissipation a maximum junction-to-ambient a c/w r q ja 14 40 17 t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 4.7 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c t a =25c t a =70c t c =25c t c =100c rev.3.0: august 2016 www.aosmd.com page 1 of 6
AON6160 symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.1 2.55 3.4 v 1.3 1.58 t j =125c 2.2 2.7 g fs 90 s v sd 0.66 1 v i s 100 a c iss 5180 6485 7790 pf c oss 730 1050 1370 pf c rss 5 30 55 pf r g 0.5 1.1 1.7 ? q g (10v) 85 120 nc q gs 24.5 nc q gd 13 nc t d(on) 19 ns t r 10.5 ns t d(off) 51 ns t f 12 ns t rr 15 33 50 ns q rr 110 176 250 nc electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v m? a v ds =0v, v gs =20v gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w i f =20a, di/dt=500a/ m s turn-on rise time turn-on delaytime maximum body-diode continuous current g input capacitance diode forward voltage dynamic parameters i dss zero gate voltage drain current r ds(on) static drain-source on-resistance i s =1a, v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v ds =v gs, i d =250 m a forward transconductance gate source charge gate drain charge switching parameters reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz f=1mhz output capacitance v gs =10v, v ds =30v, i d =20a total gate charge gate resistance q rr 110 176 250 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.3.0: august 2016 www.aosmd.com page 2 of 6
AON6160 typical electrical and thermal characteristics 0 20 40 60 80 100 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3.5v 4v 6v 10v 4.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 1 2 3 4 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.3.0: august 2016 www.aosmd.com page 3 of 6
AON6160 typical electrical and thermal characteristics 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v > or equal to 10v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 10v figure 9: maximum forward biased safe operating area (note f) r q jc =0.58 c/w rev.3.0: august 2016 www.aosmd.com page 4 of 6
AON6160 typical electrical and thermal characteristics 0 50 100 150 200 250 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =50 c/w rev.3.0: august 2016 www.aosmd.com page 5 of 6
AON6160 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.3.0: august 2016 www.aosmd.com page 6 of 6
|
